THE INFLUENCE OF THE SUBSTRATE MATERIAL ON THE GROWTH OF V2O5 FLASH-EVAPORATED FILMS

被引：72

作者：

JULIEN, C

GUESDON, JP

GORENSTEIN, A

KHELFA, A

IVANOV, I

机构：

[1] Laboratoire de Physique des Solides, associé au CNRS, Université Pierre et Marie Curie, 75252 Paris Cedex 05

来源：

APPLIED SURFACE SCIENCE | 1995年 / 90卷 / 03期

关键词：

THIN FILMS; FLASH-EVAPORATION; VANADIUM OXIDE; RAMAN SCATTERING;

D O I：

10.1016/0169-4332(95)00190-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of the substrate material on the growth of V2O5 flash-evaporated films has been studied by Raman scattering spectroscopy. The highest quality films were grown on silicon substrate maintained at 25 degrees C and annealed at 450 degrees C in Ar atmosphere.

引用

页码：389 / 391

页数：3

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