METALLIZATION SCHEME FOR N-GAAS SCHOTTKY DIODES INCORPORATING SINTERED CONTACTS AND A W DIFFUSION BARRIER

被引：24

作者：

SINHA, AK ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.88103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：171 / 173

页数：3

共 15 条

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[2] ELLIOTT RP, 1965, CONSTITUTION BINA S1
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[4] PLATINUM SILICIDE-ALUMINUM SCHOTTKY DIODE CHARACTERISTICS
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[5] FABRICATION AND NOISE PERFORMANCE OF HIGH-POWER GAAS IMPATTS
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[6] MAHONEY GE, UNPUBLISHED
[7] FABRICATION OF GAAS IMPATT DEVICES USING ELECTROPLATED HEAT SINKS .2. CONTROL OF WATER CURVATURE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 426 - 430
[8] SINHA AK, 1969, T METALL SOC AIME, V245, P237
[9] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT
SINHA, AK
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668
[10] THIN-FILM DIFFUSION OF PLATINUM IN GOLD
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[J]. THIN SOLID FILMS, 1974, 22 (01) : 1 - 10