DEUTERIUM RETENTION STUDIES OF AN AMORPHOUS-SILICON PROBE EXPOSED TO JIPP T-IIU PLASMA BY THERMAL-DESORPTION SPECTROSCOPY

被引：8

作者：

SATAKE, T

MOHRI, M

YAMASHINA, T

AMEMIYA, S

KATOH, T

NODA, N

TOI, K

TANAHASHI, S

FUJITA, J

机构：

[1] NAGOYA UNIV,DEPT NUCL ENGN,NAGOYA,AICHI 464,JAPAN

[2] NAGOYA UNIV,INST PLASMA PHYS,NAGOYA,AICHI 464,JAPAN

来源：

JOURNAL OF NUCLEAR MATERIALS | 1984年 / 128卷 / DEC期

关键词：

D O I：

10.1016/0022-3115(84)90350-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：190 / 194

页数：5

共 19 条

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