SINGLE CRYSTALLINE SI ISLANDS ON AN AMORPHOUS INSULATING LAYER RECRYSTALLIZED BY AN INDIRECT LASER-HEATING TECHNIQUE FOR 3-DIMENSIONAL INTEGRATED-CIRCUITS

被引：14

作者：

MUKAI, R

SASAKI, N

IWAI, T

KAWAMURA, S

NAKANO, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：994 / 996

页数：3

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[3] GROWTH OF SINGLE-CRYSTAL SILICON ISLANDS ON BULK FUSED-SILICA BY CO-2 LASER ANNEALING
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[4] SASAKI N, 1983, 15TH C SOL STATEV MA, P24
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