RAMAN-SCATTERING STUDY OF THE METAL-INSULATOR-TRANSITION IN BA1-XKXBIO3

被引：45

作者：

TAJIMA, S ^{[1
]}

YOSHIDA, M ^{[1
]}

KOSHIZUKA, N ^{[1
]}

SATO, H ^{[1
]}

UCHIDA, S ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,MICROBIOL & MOLEC GENET,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.46.1232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the Raman-scattering spectra of Ba1-xKxBiO3, using epitaxially grown sputtering films with various x as well as single crystals of BaBiO3. It was confirmed that in BaBiO3 the Raman excitation due to the breathing-mode phonon at 570 cm-1 is just in resonance with the electronic excitation across the charge-density-wave gap. With increasing x, this phonon-scattering intensity decreases and finally disappears at the metallic composition (x > 0.38). We could not identify the Raman continuum at high energies as intrinsic at metallic compositions. All these experimental results strongly suggest a rather conventional metallic state realized in Ba1-xKxBiO3.

引用

页码：1232 / 1235

页数：4

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