PHOTOTHERMAL DETERMINATION OF VERTICAL CRACK LENGTHS IN SILICON-NITRIDE

被引：32

作者：

RANTALA, J ^{[1
]}

HARTIKAINEN, J ^{[1
]}

JAARINEN, J ^{[1
]}

机构：

[1] NESTE CORP RES & DEV,SF-06101 PORVOO,FINLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 05期

关键词：

07.20-n; 07.60-j; 44.30+v;

D O I：

10.1007/BF00324569

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we describe the use of thermal microscopes in measuring the lengths of vertical cracks in silicon nitride. Results of theoretical calculations for temperature profiles in samples near the end of the cracks are demonstrated. These calculations showed that the effect of the crack decreases to a non-measurable level at distances of about 10 μm from the end of the crack. Experimental measurements showed that thermally obtained crack lengths were at least 34% longer than those that were optically measured. The obtained crack length was independent of the heat modulation frequency used. © 1990 Springer-Verlag.

引用

页码：465 / 471

页数：7

共 13 条

[1] THERMAL EFFECTS IN PHOTOTHERMAL SPECTROSCOPY AND PHOTOTHERMAL IMAGING [J].