OPTICAL BAND-GAP OF THE FILLED TETRAHEDRAL SEMICONDUCTOR LIZNN

被引：73

作者：

KURIYAMA, K ^{[1
]}

KATO, T ^{[1
]}

TANAKA, T ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.49.4511

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical band gap of the filled tetrahedral semiconductor LiZnN [viewed as a hypothetical zinc-blende (ZnN)- lattice partially filled with He-like Li+ interstitials] was studied. The band-gap nature of LiZnN predicted theoretically by an ''interstitial insertion rule'' is confirmed to be direct with a forbidden gap of 1.91 eV at room temperature. The band gap is closer to a value calculated using a nonrelativistic augmented-spherical-wave method rather than that predicted from the empirical trend of band gaps between the filled tetrahedral (LiZnAs and LiZnP) and zinc-blende (GaAs and GaP) structures. The difference on the bonding character between the filled tetrahedral and zinc-blende compounds is discussed.

引用

页码：4511 / 4513

页数：3

共 14 条

[1] PREPARATION AND CHARACTERIZATION OF SOME A(I)B(II)C(V)-TYPE SEMICONDUCTORS [J].