THE TRANSITION FROM TWO-DIMENSIONAL TO ONE-DIMENSIONAL ELECTRONIC TRANSPORT IN NARROW SILICON ACCUMULATION LAYERS

被引：39

作者：

DEAN, CC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] GEC,HIRST RES CTR,WEMBLEY,MIDDX,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 36期

关键词：

D O I：

10.1088/0022-3719/15/36/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1287 / 1297

页数：11

共 22 条

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[5] NON-METALLIC CONDUCTION IN THIN METAL-FILMS AT LOW-TEMPERATURES
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[6] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215
[7] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS
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WEBB, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 196 - 199
[8] THEORY OF WEAKLY LOCALIZED REGIME OF THE ANDERSON LOCALIZATION IN 2-DIMENSIONS
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[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 489 - 504
[9] Giordano N., 1981, Physics in One Dimension. Proceedings of an International Conference, P310
[10] HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707