MOSFET ANALYSIS THROUGH NUMERICAL-SOLUTION OF POISSONS-EQUATION BY THE METHOD OF MOMENTS

被引：4

作者：

ARVAS, E ^{[1
]}

TURKMAN, RI ^{[1
]}

NEELAKANTASWAMY, PS ^{[1
]}

机构：

[1] ROCHESTER INST TECHNOL RES CORP,ROCHESTER,NY 14623

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 12期

关键词：

METHOD OF MOMENTS - POISSON'S EQUATION - SIMULTANEOUS EQUATIONS;

D O I：

10.1016/0038-1101(87)90064-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1355 / 1357

页数：3

相关论文

共 17 条

[1] HALVFEM - A COMPUTER-PROGRAM FOR TWO-DIMENSIONAL FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES
ARNBORG, T
BJORKQVIST, K
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1981, 50 (01) : 15 - 26
[2] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
BUTURLA, EM
COTTRELL, PE
GROSSMAN, BM
SALSBURG, KA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231
[3] DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436
[4] THRESHOLD VOLTAGE OF SMALL-GEOMETRY SI MOSFETS
DEMASSA, TA
CHIEN, HS
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (04) : 409 - 419
[5] COMPUTATION OF LAPLACIAN POTENTIALS BY AN EQUIVALENT-SOURCE METHOD
HARRINGT.RF
PONTOPPI.K
ABRAHAMS.P
ALBERTSE.NC
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (10): : 1715 - &
[6] Harrington RF., 1982, FIELD COMPUTATION MO
[7] TWO-DIMENSIONAL DYNAMIC ANALYSIS OF SHORT-CHANNEL THIN-FILM MOS-TRANSISTORS USING A MINICOMPUTER
IPRI, AC
MEDWIN, LB
GOLDSMITH, N
BREHM, FW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 618 - 625
[8] A TWO-DIMENSIONAL ANALYTICAL THRESHOLD VOLTAGE MODEL FOR MOSFETS WITH ARBITRARILY DOPED SUBSTRATES
KENDALL, JD
BOOTHROYD, AR
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 401 - 403
[9] POOLE DR, 1983, IEEE ELECTRON DEV LE, V5, P443
[10] SARKAR TK, 1981, USAF RADCTR81103 ROM