INTERFACE STRUCTURE IN HETEROEPITAXIAL CDTE ON GAAS(100)

被引：52

作者：

PONCE, FA ^{[1
]}

ANDERSON, GB ^{[1
]}

BALLINGALL, JM ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90887-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：564 / 570

页数：7

共 8 条

[1]

BALLINGALL JM, 1985, UNPUB

[2] CD1-XMNX TE-CDTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILESTAYLOR, NC ;

BLANKS, DK ;

BUCKLAND, EL ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :92-94

[3] HIGH-QUALITY EPITAXIAL-FILMS OF CDTE ON SAPPHIRE [J].

COLE, HS ;

WOODBURY, HH ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3166-3168

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956

[5] GROWTH OF CDTE-FILMS ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

LO, Y ;

BICKNELL, RN ;

MYERS, TH ;

SCHETZINA, JF ;

STADELMAIER, HH .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4238-4240

[6] CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY [J].

MAR, HA ;

CHEE, KT ;

SALANSKY, N .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :237-239

[7]

NISHITANI K, 1983, J ELECTRON MATER, V12, P612

[8]

OLSUKA N, 1985, APPL PHYS LETT, V46, P860

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