POLYCRYSTALLINE SI THIN-FILM TRANSISTORS FABRICATED AT LESS-THAN-OR-EQUAL-TO-800-DEGREES-C - EFFECTS OF GRAIN-SIZE AND (110) FIBER TEXTURE

被引:22
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KUNG, KTY
REIF, R
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10.1063/1.339610
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O59 [应用物理学];
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页码:1503 / 1509
页数:7
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[1]   STRAIN IN SELF-IMPLANTED SILICON [J].
CHAMI, AC ;
LIGEON, E ;
DANIELOU, R ;
FONTENILLE, J ;
EYMERY, R .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :161-165
[2]   STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].
IVERSON, RB ;
REIF, R .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5169-5175
[3]   HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&
[4]   IMPLANT-DOSE DEPENDENCE OF GRAIN-SIZE AND (110) TEXTURE ENHANCEMENTS IN POLYCRYSTALLINE SI FILMS BY SEED SELECTION THROUGH ION CHANNELING [J].
KUNG, KTY ;
REIF, R .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2422-2428
[6]   SEED SELECTION THROUGH ION CHANNELING TO MODIFY CRYSTALLOGRAPHIC ORIENTATIONS OF POLYCRYSTALLINE SI FILMS ON SIO2 - IMPLANT ANGLE DEPENDENCE [J].
KUNG, KTY ;
IVERSON, RB ;
REIF, R .
APPLIED PHYSICS LETTERS, 1985, 46 (07) :683-685
[7]   MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].
MABY, EW ;
GEIS, MW ;
LECOZ, YL ;
SILVERSMITH, DJ ;
MOUNTAIN, RW ;
ANTONIADIS, DA .
ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243
[8]   DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].
MANDURAH, MM ;
SARASWAT, KC ;
HELMS, CR ;
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763
[9]   LOW-TEMPERATURE POLYSILICON SUPER-THIN-FILM TRANSISTOR (LSFT) [J].
NOGUCHI, T ;
HAYASHI, H ;
OHSHIMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L121-L123
[10]   A SUPER THIN-FILM TRANSISTOR IN ADVANCED POLY SI FILMS [J].
OHSHIMA, T ;
NOGUCHI, T ;
HAYASHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L291-L293