HIGHLY SENSITIVE RAMAN-SPECTROSCOPY BY A POSITION-SENSITIVE PHOTOMULTIPLIER AND A TRIPLE-STAGE SPECTROGRAPH WITH STIGMATIC OPTICAL CORRECTION

被引：12

作者：

TANINO, H

OKUSHI, H

机构：

[1] Electrotechnical Laboratory, Tsukuba-shi, ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Low light level detection; Position-sensitive detector; Raman scattering spectroscopy; Stigmatic optical correction; Triple-stage spectrograph;

D O I：

10.1143/JJAP.29.L2133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Raman spectrometer with extremely high sensitivity was constructed through the use of a position-sensitive photomultiplier and a triple-stage spectrograph with stigmatic optical correction. Raman spectra of Si wafer were demonstrated with the low-level excitation intensity down to 10 nW. The longitudinal optical phonon spectrum of an individual 3-layer-thick AlAs thin film buried in GaAs was obtained for the first time. The system is useful for studying a small number of atoms and molecules of various surfaces, interfaces, and ultrathin layers. © 1990 IOP Publishing Ltd.

引用

页码：L2133 / L2136

页数：4

共 16 条

[1] THE USE OF A CHARGE-COUPLED DEVICE AND POSITION-SENSITIVE RESISTIVE ANODE DETECTOR FOR MULTIORDER SPONTANEOUS RAMAN-SPECTROSCOPY FROM SILICON [J].