EXCITONIC ELECTROABSORPTION IN EXTREMELY SHALLOW QUANTUM-WELLS

被引：69

作者：

GOOSSEN, KW

CUNNINGHAM, JE

JAN, WY

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 24期

关键词：

D O I：

10.1063/1.103822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the remarkable observation of strong room-temperature excitonic features in the absorption spectra of GaAs-AlxGa1-xAs quantum wells (QWs) for values of x as low as 0.02. This has important implications for high-power modulators, since saturation intensities have been shown to be higher in QW modulators with low barriers. In addition, very shallow QWs have enhanced electroabsorption at small biases because of ease of ionization. In our p-i(multi-QW)-n device with x=0.02, we obtain a transmission change from 29% to 47% for a voltage change from +1 to -3 V.

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页码：2582 / 2584

页数：3

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