HIGHLY P-TYPED MG-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS

被引：400

作者：

NAKAMURA, S

SENOH, M

MUKAI, T

机构：

[1] Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima, 774

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

HALL-EFFECT MEASUREMENT; MG-DOPED GAN; HOLE CONCENTRATION; HOLE MOBILITY; RESISTIVITY; BUFFER LAYER;

D O I：

10.1143/JJAP.30.L1708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg-doped GaN films were grown with GaN buffer layers on a sapphire substrate. Hall-effect measurement of as-grown GaN films showed that the hole concentration was 2 x 10(15)/cm3, the hole mobility was 9 cm2/V.s and the resistivity was 320 OMEGA.cm at room temperature. After the low-energy electron-beam irradiation (LEEBI) treatment, each value became 3 x 10(18)/cm3, 9 cm2/V.s and 0.2 OMEGA.cm at room temperature, respectively. This value of the hole concentration is the highest ever reported for the p-type GaN films and that of the resistivity is the lowest.

引用

页码：L1708 / L1711

页数：4