LAMELLAR GROWTH PHENOMENA IN (111)-ORIENTED DISLOCATION-FREE FLOAT-ZONED SILICON SINGLE-CRYSTALS

被引：26

作者：

MUHLBAUER, A

SIRTL, E

机构：

[1] SIEMENS AG, BEREICH HALBLEITER, MUNICH, WEST GERMANY

[2] DOW CORNING CORP, HEMLOCK, MI 48626 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 23卷 / 02期

关键词：

D O I：

10.1002/pssa.2210230227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：555 / 565

页数：11

共 25 条

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KOLB, ED ;

SLICHTER, WP ;

STRUTHERS, JD .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1991-1996

[6] NON-CYLINDRICAL GROWTH HABIT OF FLOAT ZONED DISLOCATION-FREE [111] SILICON CRYSTALS [J].

CISZEK, TF .

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[7]

CISZEK TF, 1969, SEMICONDUCTOR SILICO

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[9]

DIKHOFF JAM, 1963, PHILIPS TECHN RDSCH, V25, P441

[10] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J].

EDWARDS, WD .

CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) :439-443

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