ELECTRICAL DETERMINATION OF THE VALENCE-BAND DISCONTINUITY IN HGTE-CDTE HETEROJUNCTIONS

被引：16

作者：

CHOW, DH ^{[1
]}

MCCALDIN, JO ^{[1
]}

BONNEFOI, AR ^{[1
]}

MCGILL, TC ^{[1
]}

SOU, IK ^{[1
]}

FAURIE, JP ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2230 / 2232

页数：3

共 26 条

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[5]

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[6]

CHOW DC, UNPUB

[7] NEGATIVE DIFFERENTIAL RESISTANCES FROM HG1-XCDX TE-CDTE SINGLE QUANTUM BARRIER HETEROSTRUCTURES [J].

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1485-1487

[8]

DORNHAUS R, 1983, NARROW GAP SEMICONDU, P158

[9] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE [J].

DUC, TM ;

HSU, C ;

FAURIE, JP .

PHYSICAL REVIEW LETTERS, 1987, 58 (11) :1127-1130

[10] HGTE-CDTE HETEROJUNCTION VALENCE-BAND DISCONTINUITY [J].

FAURIE, JP ;

HSU, C ;

DUC, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3074-3078

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