X-RAY REFLECTIVITY STUDY OF RF-SPUTTERED THIN SIO2-FILMS

被引：16

作者：

BENDER, A ^{[1
]}

GERBER, T ^{[1
]}

ALBRECHT, H ^{[1
]}

HIMMEL, B ^{[1
]}

机构：

[1] UNIV ROSTOCK,FACHBEREICH PHYS,O-2500 ROSTOCK,GERMANY

来源：

THIN SOLID FILMS | 1993年 / 229卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90404-D

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray reflectivity investigations have been performed on thin amorphoUS SiO2 films obtained by r.f.-sputtering of fused quartz onto Si single crystals in an argon atmosphere. This is a non-destructive technique to determine thickness and density as well as the interface and surface roughness. For the SiO2/Si system (small differences in density) the X-ray reflectivity is sufficiently sensitive to provide precise information on the occurence of an intermediate layer we obtained only on well-polished silicon wafers. The thickness of the films is compared with that obtained from ellipsometry data and mechanical scanning measurements (stylus method).

引用

页码：29 / 32

页数：4

共 8 条

[1]

BENDER A, 1992, THESIS U ROSTOCK

[2]

BRUGEMANN L, 1989, THESIS U KIEL

[3] THE STRUCTURE OF SILICA GLASS [J].