THEORETICAL-ANALYSIS OF GRADED-BAND-GAP GALLIUM-ALUMINUM ARSENIDE-GALLIUM ARSENIDE P-GA1-XALXAS-P-GAAS-N-GAAS SOLAR CELLS

被引：22

作者：

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECTR,MEGURO,TOKYO,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 03期

关键词：

D O I：

10.1016/0038-1101(76)90172-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：259 / 264

页数：6

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