FABRICATION OF WIRES IN SILICON-GERMANIUM MATERIAL

被引:7
作者
PAUL, DJ
CLEAVER, JRA
AHMED, H
机构
[1] Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, Madingley Road
关键词
D O I
10.1016/0167-9317(93)90089-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reactive ion etching (RIE) of epitaxial, strained Si1-xGex alloys (x < 0.2) using SiCl4 and CF4 mixtures has been investigated. RIE using CF4/O2 plasmas was found to have a significant chemical effect resulting in undercut etch profiles. Anisotropic etch profiles were found from SiCl4 and SiCl4/CF4 plasmas indicating the physical etching nature of the chlorine based plasmas. The etch rates of the Si1-xGex alloys increased with increasing Ge content for the SiCl4 and SiCl4/CF4 etch systems. The addition of CF4 to SiCl4 plasmas was found to reduce surface roughness or ''grass'', which is a known problem in chlorine based etching of Si. Wires with widths below 100nm have been fabricated.
引用
收藏
页码:349 / 352
页数:4
相关论文
共 7 条
  • [1] Kasper, Schaffler, Semiconductors and Semimetals, 33, (1991)
  • [2] Patton, Comfort, Meyerson, Crabbe, Scilla, de Fresart, Stork, Sun, Harame, Burghartz, IEEE Electron Dev. Lett., 11, (1990)
  • [3] Schaffler, Tobben, Herzog, Abstreiter, Hollander, High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer, Semiconductor Science and Technology, 7, (1992)
  • [4] Coburn, Plasma Etching and Reactive Ion Etching, (1982)
  • [5] Winters, Coburn, Surf. Sci. Reports, 14, (1992)
  • [6] Oehrlein, Kroesen, de Fresart, Zhang, Bestwick, Studies of the reactive ion etching of SiGe alloys, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 9 A, 3, (1991)
  • [7] Zhang, Oehrlein, de Fresart, J. Appl. Phys., 71, 4, (1992)