FABRICATION OF WIRES IN SILICON-GERMANIUM MATERIAL

被引：7

作者：

PAUL, DJ

CLEAVER, JRA

AHMED, H

机构：

[1] Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, Madingley Road

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90089-N

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive ion etching (RIE) of epitaxial, strained Si1-xGex alloys (x < 0.2) using SiCl4 and CF4 mixtures has been investigated. RIE using CF4/O2 plasmas was found to have a significant chemical effect resulting in undercut etch profiles. Anisotropic etch profiles were found from SiCl4 and SiCl4/CF4 plasmas indicating the physical etching nature of the chlorine based plasmas. The etch rates of the Si1-xGex alloys increased with increasing Ge content for the SiCl4 and SiCl4/CF4 etch systems. The addition of CF4 to SiCl4 plasmas was found to reduce surface roughness or ''grass'', which is a known problem in chlorine based etching of Si. Wires with widths below 100nm have been fabricated.

引用

页码：349 / 352

页数：4

共 7 条

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[3] Schaffler, Tobben, Herzog, Abstreiter, Hollander, High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer, Semiconductor Science and Technology, 7, (1992)
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[5] Winters, Coburn, Surf. Sci. Reports, 14, (1992)
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[7] Zhang, Oehrlein, de Fresart, J. Appl. Phys., 71, 4, (1992)

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