A SIMPLE THEORETICAL APPROACH TO GRAIN-BOUNDARIES IN SILICON

被引：47

作者：

PAXTON, AT ^{[1
]}

SUTTON, AP ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1988年 / 21卷 / 15期

关键词：

D O I：

10.1088/0022-3719/21/15/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L481 / L488

页数：8

共 27 条

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