GROWTH-RATE AND STICKING COEFFICIENT OF ZNSE AND ZNTE GROWN BY MOLECULAR-BEAM EPITAXY

被引：37

作者：

YAO, T ^{[1
]}

MIYOSHI, Y ^{[1
]}

MAKITA, Y ^{[1
]}

MAEKAWA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.16.369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：369 / 370

页数：2

共 6 条

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[2] HONIG RE, 1969, RCA REV, V30, P285
[3] INTERACTION OF AS4 AND GA BEAMS ON A GAAS (100) SURFACE
JEWSBURY, P
HOLLOWAY, S
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (17): : 3205 - 3215
[4] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS
SMITH, DL
PICKHARDT, VY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2366 - 2374
[5] YAO T, 1976, JPN J APPL PHYS, V15, P1001, DOI 10.1143/JJAP.15.1001
[6] YAO T, 1976, 1976 INT C SOL STAT