HOT-ELECTRON TRANSPORT IN HIGH-LYING MINIBANDS IN SEMICONDUCTOR SUPERLATTICES

被引：8

作者：

ENGLAND, P

HAYES, JR

COLAS, E

HELM, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90216-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1213 / 1217

页数：5

相关论文

共 12 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
[2] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS
CAPASSO, F
MOHAMMED, K
CHO, AY
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869
[3] TUNNELING BETWEEN 2 STRONGLY COUPLED SUPERLATTICES
DAVIES, RA
KELLY, MJ
KERR, TM
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (10) : 1114 - 1116
[4] BLOCH TRANSPORT OF ELECTRONS AND HOLES IN SUPERLATTICE MINIBANDS - DIRECT MEASUREMENT BY SUBPICOSECOND LUMINESCENCE SPECTROSCOPY
DEVEAUD, B
SHAH, J
DAMEN, TC
LAMBERT, B
REGRENY, A
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (24) : 2582 - 2585
[5] ELECTRON MASS TUNNELING ALONG THE GROWTH DIRECTION OF (AL,GA)AS/GAAS SEMICONDUCTOR SUPERLATTICES
DUFFIELD, T
BHAT, R
KOZA, M
DEROSA, F
HWANG, DM
GRABBE, P
ALLEN, SJ
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (25) : 2724 - 2727
[6] TUNNELING MEASUREMENT OF THE DENSITY OF STATES OF A SUPERLATTICE
ENGLAND, P
HAYES, JR
HARBISON, JP
HWANG, DM
FLOREZ, LT
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (05) : 391 - 393
[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
TSU, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &
[8] DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS
HAYES, JR
LEVI, AFJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1744 - 1752
[9] HOT-ELECTRON SPECTROSCOPY OF GAAS
HAYES, JR
LEVI, AFJ
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (14) : 1570 - 1572
[10] STRUCTURED-BASE HOT-ELECTRON TRANSISTORS .1. SCATTERING RATES
HERBERT, DC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (02) : 101 - 110