ON THE PERMANENT DIPOLE-INDUCED 2-LEVEL RAMAN-SCATTERING IN SEMICONDUCTOR QUANTUM-WELLS IN ELECTRIC-FIELD

被引：2

作者：

IKONIC, Z ^{[1
]}

MILANOVIC, V ^{[1
]}

TJAPKIN, D ^{[1
]}

机构：

[1] HIGH TECH POST TELEG & TEL SCH, YU-11000 BELGRADE, YUGOSLAVIA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 02期

关键词：

D O I：

10.1109/3.44946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The permanent dipole-induced two-level Raman scattering in semiconductor quantum wells in a static electric field is analyzed. Calculations performed for GaAs/AlxGa1-xAs multiple quantum wells (MQWs) indicate that reasonable, but not high, Stokes wave amplification could be obtained, and eventually used for IR generation. The gain is limited primarily by reststrahlen absorption and a rather large transition linewidth.

引用

页码：199 / 202

页数：4

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