SILICON-WAFER PREPARATION FOR LOW-TEMPERATURE SELECTIVE EPITAXIAL-GROWTH

被引：18

作者：

GALEWSKI, C

LOU, JC

OLDHAM, WG

机构：

[1] University of California, Berkeley, Cory Hall, Berkeley

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1990年 / 3卷 / 03期

关键词：

Crystals--Epitaxial Growth - Low Temperature Engineering - Mass Spectrometry;

D O I：

10.1109/66.56566

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Many potential selective silicon epitaxy applications demand low temperature processing. However, the bake in hydrogen that is commonly used to remove the native oxide before epitaxial deposition becomes less effective as the temperature is reduced. Therefore, to make selective epitaxy manufacturable there is a need for alternative oxide removal techniques that are reliable and non-contaminating. Exposure to the vapor over an aqueous solution of HF is investigated as a means of providing oxide-free and passivated wafer surfaces prior to reactor loading. The dilution of the H2O: HF mixture is found to be important in determining the oxide removal rate. An oxygen peak at the substrate interface during SIMS profiling is a sensitive indicator for the presence of oxide patches that can cause defects at the initiation of epitaxial deposition. Defect-free films without an interface peak of oxygen are grown at 850° C after using a 5-s exposure to the vapor over a 1:2 H2O:49% HF mixture followed by a 900° C hydrogen bake. A hydrogen bake temperature of 1050° C is needed in our reactor to avoid an interfacial oxygen peak for samples not exposed to the HF vapor. © 1990 IEEE

引用

页码：93 / 98

页数：6

共 16 条

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