STUDY OF THE (211) XI-3 INTERFACE IN SILICON BY ALPHA-FRINGES METHOD

被引:7
作者
ROCHER, A [1 ]
LABIDI, M [1 ]
机构
[1] FAC SCI TUNIS,DEPT PHYS,TUNIS,TUNISIA
来源
REVUE DE PHYSIQUE APPLIQUEE | 1986年 / 21卷 / 03期
关键词
D O I
10.1051/rphysap:01986002103020100
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:201 / 205
页数:5
相关论文
共 10 条
[1]   STUDY OF INTRINSIC INTERGRANULAR DISLOCATIONS BY CONVENTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].
BACMANN, JJ .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-6) :93-102
[2]  
BOURRET A, 1985, UNPUB MICROSC SEMICO
[3]   ON THE ATOMIC-STRUCTURE OF THE SIGMA=3, [112] TWIN IN SILICON [J].
FONTAINE, C ;
SMITH, DA .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :153-154
[4]  
LABIDI M, 1983, THESIS FS TUNIS
[5]  
PAPON AM, 1985, SCRIPTA MET
[6]   THE STRUCTURE AND CRYSTALLOGRAPHY OF LATERAL TWIN BOUNDARIES IN SILICON [J].
POND, RC .
JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :51-56
[7]  
POND RC, 1974, CANAD MET Q, V13, P1
[8]  
REGH J, 1968, J ELECTROCHEM SOC, V6, P155
[9]  
ROCHER A, 1973, THESIS ORSAY
[10]  
VLACHAVAS DS, 1981, I PHYS C SER, V60, P159