MODEL OF OHMIC CONTACTS TO SEMICONDUCTORS

被引：10

作者：

PELLEGRINI, B ^{[1
]}

SALARDI, G ^{[1
]}

机构：

[1] UNIV PISA,CNR,CTR STUDIO METODI DISPOSITIVI RADIOTRASMISSIONE,VIA DIOTISALVI 2,56100 PISA,ITALY

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 09期

关键词：

D O I：

10.1016/0038-1101(75)90159-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：791 / 798

页数：8

共 28 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2]

BETHE HA, 1942, 4312 MIT RAD LAB REP

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[4] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[5] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :979-&

[6] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&

[7] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J].

CROWELL, CR ;

BEGUWALA, M .

SOLID-STATE ELECTRONICS, 1971, 14 (11) :1149-&

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[9] ELECTRON-PHONON COLLECTOR BACKSCATTERING IN HOT ELECTRON TRANSISTORS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :673-&

[10] CURRENT TRANSPORT IN METAL SEMICONDUCTOR CONTACTS - UNIFIED APPROACH [J].

FONASH, SJ .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :783-&

← 1 2 3 →