INFLUENCE OF THE BARRIER PREPARATION ON THE QUALITY OF NBN/MGO/NBN JOSEPHSON-JUNCTIONS

被引:4
作者
DAVID, B
DOSSEL, O
KURSTEN, G
RABE, G
机构
[1] Philips GmbH, Forschungslab, Hamburg
关键词
D O I
10.1088/0953-2048/4/9/007
中图分类号
O59 [应用物理学];
学科分类号
摘要
NbN/MgO/NbN Josephson tunnel junctions have been prepared using various barrier preparation conditions. The energy of the sputtered MgO particles arriving at the substrate was found to be the most important parameter. Tunnel junctions (10 x 10-mu-m2) with V(m) values of up to 23 mV have been fabricated. The optimized NbN/MgO/NbN junction process is extended to a reliable whole-wafer process for DC SQUID fabrication.
引用
收藏
页码:409 / 412
页数:4
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