ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN GALLIUM-ARSENIDE

被引:59
作者
BURKE, EA
DALE, CJ
CAMPBELL, AB
SUMMERS, GP
STAPOR, WJ
XAPSOS, MA
PALMER, T
ZULEEG, R
机构
[1] MCDONNELL DOUGLAS ASTRONAUT CO,CTR MICROELECTR,HUNTINGTON BEACH,CA 92647
[2] SACHS FREEMAN ASSOCIATES,LANDOVER,MD 20785
关键词
D O I
10.1109/TNS.1987.4337456
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1220 / 1226
页数:7
相关论文
共 23 条
[1]  
ANSPAUGH BE, 1984, IEEE PHOTOVOLTAIC SP, P23
[2]   ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN SILICON [J].
BURKE, EA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1276-1281
[3]  
CAMPBELL AB, 1986, PARTICLE DAMAGE E NS, V33, P1435
[4]  
DELAFOND YG, 1969, THESIS TOULOUSE U
[5]  
Evans R. D., 1955, ATOMIC NUCL, P711
[6]  
FARRELL GE, 1983, THESIS CLARKSON COLL
[7]  
KIKUCHI K, 1968, NUCLEAR MATTER NUCLE
[8]  
KITAGAWA M, 1986, 3RD INT WORKSH FUT E, P89
[9]   RADIATION-DAMAGE EFFECTS OF ELECTRONS AND H, HE, O, CL AND CU IONS ON GAAS JFETS [J].
KNUDSON, AR ;
CAMPBELL, AB ;
STAPOR, WJ ;
SHAPIRO, P ;
MUELLER, GP ;
ZULEEG, R .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4388-4392
[10]  
Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153