MOMENTUM MATRIX-ELEMENTS IN III-V SEMICONDUCTOR ALLOYS

被引:11
作者
MERIAN, M [1 ]
BHATTACHARJEE, AK [1 ]
机构
[1] UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
关键词
D O I
10.1016/0038-1098(85)90135-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1071 / 1073
页数:3
相关论文
共 14 条
[1]   BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X [J].
BALDERESCHI, A ;
MASCHKE, K .
SOLID STATE COMMUNICATIONS, 1975, 16 (01) :99-102
[2]   EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J].
BEROLO, O ;
WOOLLEY, JC ;
VANVECHT.JA .
PHYSICAL REVIEW B, 1973, 8 (08) :3794-3798
[3]   K.P CALCULATION OF EFFECTIVE MASSES IN ZINC-BLENDE SEMICONDUCTORS [J].
BOWERS, RL ;
MAHAN, GD .
PHYSICAL REVIEW, 1969, 185 (03) :1073-&
[4]   GAMMA-1 CONDUCTION ELECTRON G-FACTOR AND MATRIX-ELEMENTS IN GAAS AND ALXGA1-X AS ALLOYS [J].
CHADI, DJ ;
CLARK, AH ;
BURNHAM, RD .
PHYSICAL REVIEW B, 1976, 13 (10) :4466-4469
[5]   ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP [J].
CHEN, AB ;
SHER, A .
PHYSICAL REVIEW B, 1981, 23 (10) :5360-5374
[6]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[7]   K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION [J].
HERMANN, C ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1977, 15 (02) :823-833
[8]  
HERMANN C, 1984, OPTICAL ORIENTATION, P463
[9]  
HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]
[10]   CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON [J].
KLEINMAN, L ;
PHILLIPS, JC .
PHYSICAL REVIEW, 1960, 118 (05) :1153-1167