共 14 条
[2]
EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS
[J].
PHYSICAL REVIEW B,
1973, 8 (08)
:3794-3798
[3]
K.P CALCULATION OF EFFECTIVE MASSES IN ZINC-BLENDE SEMICONDUCTORS
[J].
PHYSICAL REVIEW,
1969, 185 (03)
:1073-&
[4]
GAMMA-1 CONDUCTION ELECTRON G-FACTOR AND MATRIX-ELEMENTS IN GAAS AND ALXGA1-X AS ALLOYS
[J].
PHYSICAL REVIEW B,
1976, 13 (10)
:4466-4469
[5]
ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP
[J].
PHYSICAL REVIEW B,
1981, 23 (10)
:5360-5374
[6]
BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
[J].
PHYSICAL REVIEW,
1966, 141 (02)
:789-+
[7]
K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION
[J].
PHYSICAL REVIEW B,
1977, 15 (02)
:823-833
[8]
HERMANN C, 1984, OPTICAL ORIENTATION, P463
[9]
HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]
[10]
CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON
[J].
PHYSICAL REVIEW,
1960, 118 (05)
:1153-1167