FRACTIONAL QUANTUM HALL-EFFECT IN HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES IN TILTED MAGNETIC-FIELDS

被引：29

作者：

DAVIES, AG

NEWBURY, R

PEPPER, M

FROST, JEF

RITCHIE, DA

JONES, GAC

机构：

[1] Cavendish Laboratory, University of Cambridge, Cambridge, Madingley Road

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.44.13128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fractional quantum Hall effect (FQHE) has been studied as a function of magnetic field in a series of high-quality p-type GaAs-AlxGa1-xAs heterojunctions. The magnetic-field dependence of the v = 4/3 FQHE state, investigated by tilting the samples in the applied field, is consistent with a change in the spin polarization of the ground state. The behavior suggests that the Zeeman splitting of the interacting carriers forming this ground state is larger in this material, at a given magnetic field, than in comparable n-type samples. At high tilt angles, structure is observed to emerge in the second Landau level at v = 8/3.

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页码：13128 / 13131

页数：4

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