STUDIES OF CHEMISTRY AT THE TA/SI INTERFACE AS A FUNCTION OF THERMAL-PROCESSING

被引：2

作者：

LEW, PW ^{[1
]}

HELMS, CR ^{[1
]}

REITH, TM ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1149/1.2120071

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1730 / 1735

页数：6

共 11 条

[1]

[Anonymous], [No title captured]

[2]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[3]

ELLIOTT RP, 1965, CONSTITUTION BINAR S, P694

[4]

HANSEN M, 1959, CONSTITUTION BINARY, P1067

[5] AUGER ANALYSIS OF SIO2-SI INTERFACE [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

[6]

Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

REITH, TM ;

FICALORA, PJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :303-306

[8]

RHODERICK EH, 1978, METAL SEMICONDUCTOR, P55

[9]

Sello H., 1969, Ohmic contacts to semiconductors, P277

[10]

SHUNK FA, 1969, CONSTITUTION BINAR S, P575