SILICON ETCHING IN CRO3-HF SOLUTIONS .1. HIGH [HF] [CRO3] RATIOS

被引：17

作者：

VANDENMEERAKKER, JEAM

VANVEGCHEL, JHC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

D O I：

10.1149/1.2097095

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1949 / 1953

页数：5

共 18 条

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[7] ANODIC PROPERTIES OF N-SI AND N-GE ELECTRODES IN HF SOLUTION UNDER ILLUMINATION AND IN THE DARK [J].

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[8] PHOTOANODIC PROPERTIES OF AN NORMAL-TYPE SILICON ELECTRODE IN AQUEOUS-SOLUTIONS CONTAINING FLUORIDES [J].

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[10]

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