HIGH-TRANSCONDUCTANCE P-CHANNEL MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURE FETS

被引：12

作者：

HIRANO, M

OE, K

YANAGAWA, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1109/T-ED.1986.22542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：620 / 624

页数：5

共 12 条

[1]

Camnitz L. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P360

[2] HIGH-SPEED LOW-VOLTAGE RING OSCILLATORS BASED ON SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS [J].

FEUER, MD ;

HENDEL, RH ;

KIEHL, RA ;

HWANG, JCM ;

KERAMIDAS, VG ;

ALLYN, CL ;

DINGLE, R .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :306-307

[3] PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS [J].

HIRANO, M ;

OE, K ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L868-L870

[4] COMPLEMENTARY P-MODFET AND N-HB MESFET (AL,GA)AS TRANSISTORS [J].

KIEHL, RA ;

GOSSARD, AC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :521-523

[5] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J].

LEE, CP ;

WANG, WI .

ELECTRONICS LETTERS, 1983, 19 (05) :155-157

[6] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].

MIMURA, T ;

JOSHIN, K ;

HIYAMIZU, S ;

HIKOSAKA, K ;

ABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600

[7] N+ SELF-ALIGNED-GATE ALGAAS/GAAS HETEROSTRUCTURE FET [J].

MIZUTANI, T ;

ARAI, K ;

OE, K ;

FUJITA, S ;

YANAGAWA, F .

ELECTRONICS LETTERS, 1985, 21 (15) :638-639

[8] A NEW P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET EMPLOYING 2 DIMENSIONAL HOLE GAS [J].

OE, K ;

HIRANO, M ;

ARAI, K ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (05) :L335-L337

[9]

OE K, UNPUB

[10]

STOMER HL, 1984, APPL PHYS LETT, V44, P1062

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