OBSERVATION AND COMPOSITIONAL STUDIES OF THE METALLIC CONDUCTING FILAMENTS IN THE LOW-RESISTANCE STATE (ON-STATE) OF SIO V2O5 THIN-FILMS USED AS MEMORY ELEMENTS

被引：8

作者：

ALRAMADHAN, FAS

HOGARTH, CA

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1984年 / 19卷 / 06期

关键词：

D O I：

10.1007/BF00550264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1939 / 1946

页数：8

共 26 条

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