BURSTEIN-MOSS EFFECT IN HG1-XCDXTE

被引：7

作者：

CHU, JH ^{[1
]}

QIAN, DR ^{[1
]}

TANG, DY ^{[1
]}

机构：

[1] CHINESE ACAD SCI,SHANGHAI INST TECH PHYS,INFRARED PHYS LAB 2,SHANGHAI,PEOPLES R CHINA

来源：

PHYSICA SCRIPTA | 1986年 / T14卷

关键词：

D O I：

10.1088/0031-8949/1986/T14/006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：37 / 41

页数：5

共 9 条

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[4]

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[7] THE INTERPRETATION OF THE PROPERTIES OF INDIUM ANTIMONIDE [J].

MOSS, TS .

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[8]

MOSS TS, 1973, SEMICONDUCTOR OPTOEL, P84

[9] A BONDING MATERIAL USEFUL IN 2-14 MUM SPECTRAL RANGE [J].

PACKARD, RD .

APPLIED OPTICS, 1969, 8 (09) :1901-&

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