OPTICALLY ENHANCED MOBILITY IN A PERSISTENT PHOTOCONDUCTION STATE

被引：4

作者：

THEODOROU, DE ^{[1
]}

QUEISSER, HJ ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.27.7786

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7786 / 7788

页数：3

共 9 条

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WAGNER, E ;

QUEISSER, HJ .

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[2]

Brooks H., 1955, ADV ELECTRON, V7, P85

[3] ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS [J].

CHATTOPADHYAY, D ;

QUEISSER, HJ .

REVIEWS OF MODERN PHYSICS, 1981, 53 (04) :745-768

[4] PHOTO-HALL-EFFECT MEASUREMENTS OF IONIZED IMPURITY SCATTERING IN GAAS [J].

PAESLER, MA ;

QUEISSER, HJ .

PHYSICAL REVIEW B, 1978, 17 (06) :2625-2630

[5] OPTICALLY ENHANCED HALL-MOBILITY IN GAAS [J].

PAESLER, MA ;

QUEISSER, HJ .

SOLID STATE COMMUNICATIONS, 1977, 21 (12) :1143-1145

[6] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS [J].

QUEISSER, HJ ;

THEODOROU, DE .

PHYSICAL REVIEW LETTERS, 1979, 43 (05) :401-404

[7]

SEEGER K, 1982, SEMICONDUCTOR PHYSIC

[8]

SHEINKMAN MK, 1976, SOV PHYS SEMICOND+, V10, P128

[9] ILLUMINATION-DOSE DEPENDENCE OF PERSISTENT PHOTOCONDUCTIVITY OF N-GAAS EPITAXIAL LAYERS [J].

THEODOROU, DE ;

QUEISSER, HJ .

APPLIED PHYSICS, 1980, 23 (02) :121-126

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