REDUCED THRESHOLD CURRENT TEMPERATURE-DEPENDENCE IN DOUBLE HETEROSTRUCTURE LASERS DUE TO SEPARATE P-N AND HETEROJUNCTIONS

被引：11

作者：

ANTHONY, PJ

PAWLIK, JR

SWAMINATHAN, V

TSANG, WT

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1071999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1030 / 1035

页数：6

共 20 条

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[7] DOPING CHARACTERISTICS AND ELECTRICAL-PROPERTIES OF BE-DOPED P-TYPE ALXGA1-XAS BY LIQUID-PHASE EPITAXY [J].

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5438-5444

[8] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].

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CHIN, R .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589

[9] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

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[10]

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