X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF THE VALENCE STATE OF TL IN SINGLE-TL-O-LAYERED TLBA1-XSRXLACUO5 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1)

被引：18

作者：

SUNDARESAN, A

GOPINATH, CS

TAMHANE, AS

RAJARAJAN, AK

SHARON, M

SUBRAMANIAN, S

PINTO, R

GUPTA, LC

VIJAYARAGHAVAN, R

机构：

[1] INDIAN INST TECHNOL,REG SOPHISTICATED INSTRUMENTAT CTR,MADRAS 600036,TAMIL NADU,INDIA

[2] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.46.6622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The valence state of thallium in TlBa1-xSrxLaCuO5 (x = 0.0, 0.4, 0.7, and 1.0) has been investigated by measuring Tl 4f core levels by x-ray photoelectron spectroscopy. It is shown that the valence state of Tl in TlBaLaCuO5 (nonsuperconducting) is 3+, whereas that in TlSrLaCuO5 (superconducting, T(c) = 32 K) is between 3+ and 1+. The origin of holes in the latter compound is discussed in terms of charge transfer between Tl ions and Cu-O layers as has been found in double-Tl-O-layered compounds.

引用

页码：6622 / 6625

页数：4

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