PLANAR, ION-IMPLANTED, HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES

Planar, high voltage (800 V) P-N junction diodes have been fabricated for the first time on N-type 6H-SiC by room temperature boron implantation through a pad oxide deposited within windows etched in an LPCVD field oxide. All the diodes showed excellent rectification with leakage currents of less than 10 nA (similar to 5 x 10(-5) A/cm(2)) until avalanche breakdown. It was found that the breakdown voltage increases nifh junction depth. The reverse recovery time (t(rr)) was measured to be 50 ns for the 800 V diode from which an effective minority carrier life time of 12.5 ns was extracted.