AMMONOTHERMAL SYNTHESIS OF ALUMINUM NITRIDE

被引：43

作者：

PETERS, D

机构：

[1] FuE Chemikalien, Hoechst AG, D-5030 Hürth, Werk Knapsack

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 02期

关键词：

D O I：

10.1016/0022-0248(90)90141-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper describes and discusses the preparation of aluminium nitride by ammonothermal reaction of aluminium with ammonia using potassium amide as transporting agent. Crystals of aluminium nitride are grown in the temperature range of 500 to 600°C and at ammonia pressures of 2 kbar. KNH2 is removed from the reaction product by extraction with liquid ammonia. Single crystals of aluminium nitride predominantely grow in the direction of the crystallographic c-axis. Dense layers of single crystals up to a thickness of 1 mm can be produced. © 1990.

引用

页码：411 / 418

页数：8

共 18 条

[1]

AHRENDSTS J, 1979, VDI596 FORSCH

[2]

BAKEMEIER J, 1985, ULLMANS ENCY IND CHE, P143

[3]

BOROM MP, 1972, CERAMIC B, V51, P852

[4]

BREC R, 1968, B SOC CHIM FR, P2721

[5]

HARLOW A, COMMUNICATION

[6] HOCHDRUCKSYNTHESE DER ETA-PHASE IM SYSTEM MN-N-MN3N2 [J].

JACOBS, H ;

STUVE, C .

JOURNAL OF THE LESS-COMMON METALS, 1984, 96 :323-329

[7]

JACOBS H, 1984, CURRENT TOPICS MATER, V8, P379

[8]

Kuramoto N., 1986, 36th Electronic Components Conference Proceedings 1986 (Cat. No.86CH2302-8), P424

[9] ALN SUBSTRATES WITH HIGH THERMAL-CONDUCTIVITY [J].

KUROKAWA, Y ;

UTSUMI, K ;

TAKAMIZAWA, H ;

KAMATA, T ;

NOGUCHI, S .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1985, 8 (02) :247-252

[10]

KUROKAWA Y, 1985, IEEE T COMPON HYBR, P402

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