HIGH FLATNESS MASK FOR STEP AND REPEAT X-RAY-LITHOGRAPHY

被引:7
作者
SUZUKI, K
MATSUI, J
机构
[1] NEC Corp, Kawasaki, Jpn, NEC Corp, Kawasaki, Jpn
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词
D O I
10.1116/1.583443
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
13
引用
收藏
页码:221 / 225
页数:5
相关论文
共 10 条
[1]   FABRICATION OF SILICON MOS DEVICES USING X-RAY LITHOGRAPHY [J].
BERNACKI, SE ;
SMITH, HI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :421-428
[2]   A SENSITIVE NOVOLAC-BASED POSITIVE ELECTRON RESIST [J].
BOWDEN, MJ ;
THOMPSON, LF ;
FAHRENHOLTZ, SR ;
DOERRIES, EM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1304-1313
[3]   TRANSMISSION, ENERGY-DISTRIBUTION, AND SE EXCITATION OF FAST ELECTRONS IN THIN SOLID FILMS [J].
FITTING, HJ .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :525-535
[4]   INTERNAL STRESSES IN MULTILAYERED STRUCTURES [J].
GHATE, PB ;
HALL, LH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :491-&
[5]   APPLICATION OF CHLORINATED POLYMETHYLSTYRENE, CPMS, TO ELECTRON-BEAM LITHOGRAPHY [J].
KAMOSHIDA, Y ;
KOSHIBA, M ;
YOSHIMOTO, H ;
HARITA, Y ;
HARADA, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1156-1159
[6]   SPURIOUS EFFECTS CAUSED BY CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY [J].
MALDONADO, JR ;
COQUIN, GA ;
MAYDAN, D ;
SOMEKH, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1329-1331
[7]   EFFECTS OF PHOTO-ELECTRONS AND AUGER ELECTRONS ON CONTRAST AND RESOLUTION IN X-RAY-LITHOGRAPHY [J].
SAITOH, Y ;
YOSHIHARA, H ;
WATANABE, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (01) :L52-L54
[8]   HIGH-RESOLUTION PATTERN REPLICATION USING SOFT X-RAYS [J].
SPEARS, DL ;
SMITH, HI .
ELECTRONICS LETTERS, 1972, 8 (04) :102-&
[9]   SIN MEMBRANE MASKS FOR X-RAY-LITHOGRAPHY [J].
SUZUKI, K ;
MATSUI, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :191-194
[10]  
SUZUKI K, 1982, 10TH P INT C EL ION, V83, P333