LOW-VOLTAGE, REVERSE-BIASED DIODES OF ERBIUM-IMPLANTED AND NEODYMIUM-IMPLANTED ZINC SELENIDE

被引：6

作者：

ZHONG, GZ ^{[1
]}

BRYANT, FJ ^{[1
]}

机构：

[1] UNIV HULL,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1982年 / 15卷 / 04期

关键词：

D O I：

10.1088/0022-3727/15/4/323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：705 / 709

页数：5

相关论文

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