THIN-FILM DEPOSITION OF DIELECTRIC OXIDES BY LASER ABLATION

被引：12

作者：

AMIRHAGHI, S ^{[1
]}

ARCHER, A ^{[1
]}

TAGUIANG, B ^{[1
]}

MCMINN, R ^{[1
]}

BARNES, P ^{[1
]}

TARLING, S ^{[1
]}

BOYD, IW ^{[1
]}

机构：

[1] UNIV LONDON BIRKBECK COLL,DEPT CRYSTALLOG,LONDON WC1E 7HX,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90045-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of MgO and CeO2 have been grown in situ on silicon (111) and silicon (100) by laser ablation using a pulsed Nd:YAG laser at 532 nm. It was found that deposition temperature was decisive for the preferential growth of MgO in the [220] or the [200] orientations. The preferential growth of CeO2 in the [111] direction is dependent upon the low partial pressures of oxygen. Values of refractive index close to that of the bulk materials were obtained. X-ray diffraction, and scanning electron microscopy were utilised to characterise the films.

引用

页码：205 / 209

页数：5

共 8 条

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