XANES STUDY OF STRUCTURAL DISORDER IN AMORPHOUS-SILICON

被引：22

作者：

DICICCO, A

BIANCONI, A

COLUZZA, C

RUDOLF, P

LAGARDE, P

FLANK, AM

MARCELLI, A

机构：

[1] UNIV PARIS 11,CEA,CNRS,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,MEN,F-91405 ORSAY,FRANCE

[2] IST NAZL FIS NUCL,LAB NAZL FRASCATI,I-00044 FRASATI,ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1990年 / 116卷 / 01期

关键词：

24;

D O I：

10.1016/0022-3093(90)91041-O

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An investigation of the structure of several amorphous silicon (a-Si) films is presented. Samples were prepared by using the ion beam sputtering technique at different substrate deposition temperatures. X-ray absorption spectroscopy and multiple scattering formalism have been used to detect structural variations of the a-Si films. The analysis of the XANES (X-ray absorption near-edge structure) spectra shows that increasing the substrate deposition temperature leads to a structural change toward a higher-level short-range order. © 1990.

引用

页码：27 / 32

页数：6

共 25 条

[1] SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON
BALERNA, A
BENFATTO, M
MOBILIO, S
NATOLI, CR
FILIPPONI, A
EVANGELISTI, F
[J]. JOURNAL DE PHYSIQUE, 1986, 47 (C-8): : 63 - 66
[2] MULTIPLE-SCATTERING REGIME AND HIGHER-ORDER CORRELATIONS IN X-RAY-ABSORPTION SPECTRA OF LIQUID SOLUTIONS
BENFATTO, M
NATOLI, CR
BIANCONI, A
GARCIA, J
MARCELLI, A
FANFONI, M
DAVOLI, I
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5774 - 5781
[3] BENFATTO M, 1989, PHYS REV B, V40
[4] MULTIPLE-SCATTERING EFFECTS IN THE K-EDGE X-RAY-ABSORPTION NEAR-EDGE STRUCTURE OF CRYSTALLINE AND AMORPHOUS-SILICON
BIANCONI, A
DICICCO, A
PAVEL, NV
BENFATTO, M
MARCELLI, A
NATOLI, CR
PIANETTA, P
WOICIK, J
[J]. PHYSICAL REVIEW B, 1987, 36 (12): : 6426 - 6433
[5] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON
CODY, GD
TIEDJE, T
ABELES, B
BROOKS, B
GOLDSTEIN, Y
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483
[6] COLUZZA C, 1983, J NON-CRYST SOLIDS, V59-6, P723, DOI 10.1016/0022-3093(83)90273-9
[7] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1.
CONNELL, GAN
TEMKIN, RJ
[J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5323 - 5326
[8] SPHERICAL WAVE EXAFS ANALYSIS OF THE SILICON K-EDGE X-RAY ABSORPTION-SPECTRUM
DICICCO, A
BIANCONI, A
PAVEL, NV
[J]. SOLID STATE COMMUNICATIONS, 1987, 61 (10) : 635 - 639
[9] X-RAY ABSORPTION ANALYSIS OF STRUCTURAL DISORDER IN AMORPHOUS-SILICON
DICICCO, A
BIANCONI, A
COLUZZA, C
RUDOLF, P
LAGARDE, P
FLANK, AM
MARCELLI, A
[J]. PHYSICA B, 1989, 158 (1-3): : 598 - 599
[10] A NEUTRON-DIFFRACTION STUDY OF THE STRUCTURE OF EVAPORATED AMORPHOUS-GERMANIUM
ETHERINGTON, G
WRIGHT, AC
WENZEL, JT
DORE, JC
CLARKE, JH
SINCLAIR, RN
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 48 (2-3) : 265 - 289

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