X-RAY MASK DISTORTION DUE TO RADIATION-DAMAGE

被引:8
作者
ACOSTA, RE
机构
[1] IBM Research Division T.J. Watson Research Center Yorktown Heights
关键词
D O I
10.1016/0167-9317(91)90088-U
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
During use X-ray masks will receive very large accumulated doses, perhaps as high as 0.5 MJ/cm2. Because the allowed mask distortion for 0.25-mu-m ground rules is of the order of 0.075-mu-m, the permissible radiation-induced distortion is congruent-to 0.025-mu-m, thus requiring substrate materials with negligible distortion when subjected to large radiation doses. The in-plane distortion of various X-ray mask substrate candidates when subjected to large accumulated doses, up to 51,000 J/cm2, is reported.
引用
收藏
页码:259 / 262
页数:4
相关论文
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