WAFER CHARGING AND BEAM INTERACTIONS IN ION-IMPLANTATION

被引：20

作者：

MACK, ME

RYDING, G

DOUGLASHAMILTON, DH

STEEPLES, K

FARLEY, M

GILLIS, V

WHITE, N

WITTKOWER, A

LAMBRACHT, R

机构：

[1] ZYMET CORP,BEVERLY,MA 01915

[2] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90665-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：405 / 411

页数：7

共 9 条

[1]

AKISHIN AI, 1962, IZVES AKAD NAUK SSR, V26, P1379

[2]

COMBE MJ, 1984, Patent No. 28903429

[3] SPUTTERING OF VITREOUS SILICA BY 20- TO 60-KEV XE+ IONS [J].

HINES, RL ;

WALLOR, R .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) :202-&

[4] RADIATION EFFECTS OF BOMBARDMENT OF QUARTZ AND VITREOUS SILICA BY 7.5-KEV TO 59-KEV POSITIVE IONS [J].

HINES, RL ;

ARNDT, R .

PHYSICAL REVIEW, 1960, 119 (02) :623-633

[5] BEAM TRANSPORT [J].

HOLMES, AJT .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :47-58

[6]

MCDANIEL EW, 1977, H781 US ARM MISS RES

[7]

MCKENNA CM, 1962, ION IMPLANTATION TEC

[8]

SPIVAK GV, 1957, DOKL AKAD NAUK SSSR+, V114, P1001

[9]

WADA Y, 1979, JPN J APPL PHYS, V15, P2289

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