HIGHLY SENSITIVE POSITIVE DEEP UV RESIST UTILIZING A SULFONATE ACID GENERATOR AND A TETRAHYDROPYRANYL INHIBITOR

被引：6

作者：

SCHLEGEL, L

UENO, T

SHIRAISHI, H

HAYASHI, N

IWAYANAGI, T

机构：

[1] Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90042-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new positive deep UV resist composed of the sulfonic acid ester MeSB as the acid generator and a tetrahydropyranyl inhibitor in a novolak matrix resin was investigated. The resist is very sensitive (D < 10mJ/cm2) and exhibits no negative tone behavior at high exposure doses. With optimized prebaking and post-exposure-bake conditions 0.35-mu-m features with good line profiles are easily resolved with excimer laser stepper exposure.

引用

页码：33 / 36

页数：4

共 5 条

[1]

Ito, Willson, Polym. Eng. Sci., 23, (1983)

[2]

Hayashi, Hesp, Ueno, Toriumi, Iwayanagi, Nonogaki, ACS Polymeric Materials Science and Technology, 61, (1989)

[3]

Ueno, Shiraishi, Schlegel, Hayashi, Iwayanagi, Chemical amplification positive resist systems using novel sulfonates as acid generators, Polymers for Microelectronics - Science and Technology, (1989)

[4]

Schlegel, Ueno, Shiraishi, Hayashi, Iwayanagi, Chem. Mater., 2, (1990)

[5]

Grant, Prelog, Sneedan, Synthese eines 1-Oxa-phenalen-Derivates mit dem chromophoren System des Biflorins, Helvetica Chimica Acta, 46, (1963)

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