PHONONS ON RECONSTRUCTED SILICON SURFACES

[1] SURFACE RECONSTRUCTION AND LATTICE-DYNAMICS OF HYDROGENATED SI(001)-2X1 [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5565 - 5568

[2] COMPLEX TETRAHEDRAL STRUCTURES OF SILICON AND CARBON UNDER PRESSURE [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3210 - 3213

[3] SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285

[4] CHABAL YJ, COMMUNICATION

[5] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[6] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[7] CALCULATION OF LATTICE DYNAMICAL PROPERTIES FROM ELECTRONIC ENERGIES - APPLICATION TO C, SI AND GE [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (07) : 643 - 646

[8] EFFECT OF GEOMETRIC DEFORMATION OF TETRAHEDRAL BONDING ON THE VIBRATIONAL PROPERTIES OF GROUP-IV SEMICONDUCTORS - SI IN THE BC-8 STRUCTURE [J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6661 - 6668

[9] HARRISON WA, 1980, ELECTRONIC STRUCTURE, P48

[10] THE ATOMIC GEOMETRY OF SI(100)-(2X1) REVISITED [J]. SURFACE SCIENCE, 1984, 140 (02) : L269 - L278

[1] SURFACE RECONSTRUCTION AND LATTICE-DYNAMICS OF HYDROGENATED SI(001)-2X1 [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5565 - 5568

[2] COMPLEX TETRAHEDRAL STRUCTURES OF SILICON AND CARBON UNDER PRESSURE [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3210 - 3213

[3] SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285

[4] CHABAL YJ, COMMUNICATION

[5] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (15) : 1062 - 1065

[6] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[7] CALCULATION OF LATTICE DYNAMICAL PROPERTIES FROM ELECTRONIC ENERGIES - APPLICATION TO C, SI AND GE [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (07) : 643 - 646

[8] EFFECT OF GEOMETRIC DEFORMATION OF TETRAHEDRAL BONDING ON THE VIBRATIONAL PROPERTIES OF GROUP-IV SEMICONDUCTORS - SI IN THE BC-8 STRUCTURE [J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6661 - 6668

[9] HARRISON WA, 1980, ELECTRONIC STRUCTURE, P48

[10] THE ATOMIC GEOMETRY OF SI(100)-(2X1) REVISITED [J]. SURFACE SCIENCE, 1984, 140 (02) : L269 - L278