BA FERRITE THIN-FILMS WITH LARGE SATURATION MAGNETIZATION DEPOSITED BY SPUTTERING IN MIXTURE OF XE, AR AND O-2

BaM ferrite films 5000 Angstrom thick were deposited on ZnO underlayer at substrate temperature of 600 degrees C by the facing targets sputtering method in mixture of Xe and Ar of 0.19 Pa in addition to O-2 of 0.01 Pa. The Xe partial pressure P-Xe were varied from 0.0 to 0.19 Pa and then the P-Ar were varied from 0.19 to 0.0 Pa. The films deposited at P-Xe of 0.19 Pa had almost tile stoichiometric composition of BaM ferrite and tile crystallite size <D>, the foil width at half maximum of tile rocking curve Delta 0(50), saturation magnetization 4 pi M(s), squareness S, perpendicular coercivity H-c perpendicular to were 300 Angstrom, 3.7 degrees, 5.1. kG, 0.51 and 2.3 kOe, respectively. It should be noted that it had larger 4 pi M(s), than that of bulk BaM ferrite, of which 4 pi M(s), is 4.8 kG.