CLEAVAGE ENERGIES IN SEMICONDUCTORS

被引：15

作者：

BERDING, MA ^{[1
]}

KRISHNAMURTHY, S ^{[1
]}

SHER, A ^{[1
]}

CHEN, AB ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.345181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method for the calculation of the surface and cleavage energies, Eγ, for semiconductors, based on a tight-binding Green's function approach and a difference-equation solution for the layered structure. Energies are calculated for a representative group of semiconductors, and cleavage energies are found to agree well with the available experimental data. We find ESiγ(111)=1360 ergs/cm2, and Eγ(110)=1000, 180, and 120 ergs/cm2 for GaAs, CdTe, and HgTe, respectively.

引用

收藏

页码：6175 / 6178

页数：4

相关论文

共 22 条

[1] GREEN-FUNCTIONS FOR SURFACE PHYSICS [J].

ALLEN, RE .

PHYSICAL REVIEW B, 1979, 20 (04) :1454-1472

[2]

[Anonymous], ELECTRONIC STRUCTURE

[3] (111) SURFACE TENSIONS OF III-V COMPOUNDS AND THEIR RELATIONSHIP TO SPONTANEOUS BENDING OF THIN CRYSTALS [J].

CAHN, JW ;

HANNEMAN, RE .

SURFACE SCIENCE, 1964, 1 (04) :387-398

[4] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[5] DIFFERENCE-EQUATION APPROACH TO THE ELECTRONIC-STRUCTURES OF SURFACES, INTERFACES, AND SUPERLATTICES [J].

CHEN, AB ;

LAIHSU, YM ;

CHEN, W .

PHYSICAL REVIEW B, 1989, 39 (02) :923-929

[6] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J].

GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2208-2218

[7]

Griffith AA, 1920, PHILOS T R SOC, V221, P163, DOI DOI 10.1098/RSTA.1921.0006

[8]

HASS K, 1984, PHYS REV B, V25, P2660

[9] ELECTRONIC-STRUCTURE OF HG1-XCDXTE [J].

HASS, KC ;

EHRENREICH, H ;

VELICKY, B .

PHYSICAL REVIEW B, 1983, 27 (02) :1088-1100

[10] SURFACE ENERGY OF GERMANIUM AND SILICON [J].

JACCODINE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527